CMOS集成电路中MOS管匹配特性分析

Analysis and study on matching characterization of MOS transistors in CMOS integrated circuits

目的研究CMOS集成电路中MOS管匹配特性。方法通过分析MOS管在饱和区和线性区的工作方程,分别推导了引起MOS管电压、电流失配的因素,并分析对MOS管匹配特性的影响。结果系统地提出一些进行MOS管匹配设计的方法及应该采取的版图设计规则。结论可作为CMOS集成电路设计提供必要的理论依据。

Aim To study matching characterization of MOS transistors in CMOS integrated circuits.Methods Mismatch factors between the voltage and current of the MOS transistor were deduced by analyzing the transistor equation in saturation and linear region,and the influence of MOS transistor matching was stated.Results Some effective methods and rules for designing MOS were presented systemically.Conclusion It can be used as theoretic foundation for CMOS IC design.