摘要
目的研究CMOS集成电路中MOS管匹配特性。方法通过分析MOS管在饱和区和线性区的工作方程,分别推导了引起MOS管电压、电流失配的因素,并分析对MOS管匹配特性的影响。结果系统地提出一些进行MOS管匹配设计的方法及应该采取的版图设计规则。结论可作为CMOS集成电路设计提供必要的理论依据。
Aim To study matching characterization of MOS transistors in CMOS integrated circuits.Methods Mismatch factors between the voltage and current of the MOS transistor were deduced by analyzing the transistor equation in saturation and linear region,and the influence of MOS transistor matching was stated.Results Some effective methods and rules for designing MOS were presented systemically.Conclusion It can be used as theoretic foundation for CMOS IC design.
出处
《西北大学学报(自然科学版)》
CAS
CSCD
北大核心
2007年第5期748-752,共5页
Journal of Northwest University(Natural Science Edition)
基金
教育部"春晖计划"科研基金资助项目(Z2005-1-61001)
关键词
电压匹配
电流匹配
MOS管失配
版图设计
voltage matching
current matching
transistor mismatching
layout design