摘要
对用直流等离子体化学气相沉积（ＤＣ－ＰＣＶＤ）法得到的非晶态氮化硅薄膜结构与性能进行了研究。对氮化硅薄膜的表面显微硬度和剖面显微硬度进行了测试。
The structure and the property of amorphous silicon nitride film formed by direct current plasma chemical vapour deposition (DC PCVD) were analyzed. The surface microhardness and the cross section microhardness of silicon nitride were tested. The reasons why the hardness of amorphous silicon nitride is higher than that of crystal silicon nitride were also discussed.
出处
《材料科学与工程》
CSCD
1997年第2期56-60,共5页
Materials Science and Engineering
关键词
化学气相沉积
非晶态
氮化硅
薄膜
显微硬度
Chemical vapour deposition,Amorphous,Silicon nitride film,Microhardness
