期刊文献+

IGBT的抗短路能力分析 被引量:9

The Characteristics of IGBT Anti-Short-Circuit Ability
下载PDF
导出
摘要 简述了IGBT短路保护的必要性和特殊性I、GBT短路安全工作区(SCSOA)的能力;介绍了SCSOA的特性及测试条件;分析了不同类型SCSOA的可信度与性能差异I、GBT短路过程中电流限制性能和管芯温升情况、高结温条件下IGBT的特性和可靠性;阐述了IGBT短路耐受性与实用条件的关系;提出了正确使用短路保护技术的建议。 The necessity as well as particularity of IGBT short circuit protection and the ability of IGBT SCSOA is described,the characteristics,test conditions,kinds creditability and difference characteristics of SCSOA are introduced.In the operation of short circuit the current limitation,core temperature raise and the characteristics together with creditability in the high temperature is analyzed.The relation between short current endurance of IGBT and using conditions is explained.In the end the proper proposal about applieation of short current protection teehnology is put forward.
作者 陈永真
机构地区 辽宁工业大学
出处 《电力电子技术》 CSCD 北大核心 2007年第12期131-133,共3页 Power Electronics
关键词 电力半导体器件 短路保护 驱动电路/绝缘栅型双极晶体管 power semiconductor device short-circuit proteet drive eireuit/insulated gate bipolar transistor
  • 相关文献

参考文献3

  • 1http://ixdev.ixys.com/DataSheet/97524.pdf, 2007,05,10.
  • 2http://www.mitsubishichips.com/Global/files/manuals/powermos4_0.pdf, 2007,05,10.
  • 3SIEMENS.Power Semiconductors Power Modules IGBT Data Book[M].Germany : SIEMENS, 2006,95 : 19-20.

同被引文献48

  • 1谢少军,陈万.电压电流双闭环瞬时值控制级联逆变器研究[J].南京航空航天大学学报,2004,36(5):589-594. 被引量:17
  • 2瞿文龙,刘可,王耀明,刘士祥.一种大容量IGBT的驱动和快速保护方法[J].清华大学学报(自然科学版),1996,36(5):94-100. 被引量:4
  • 3辛丽莉,吴长奇.逆变电源监控网络的安全机制[J].无线电通信技术,2007,33(4):47-49. 被引量:2
  • 4傅胜阳,陈辉明,王正仕.基于AVR单片机的SPWM控制技术[J].机电工程,2007,24(9):26-28. 被引量:7
  • 5HU D Q,WU Y,KANG B W,et al. A new internaltransparent collector IGBT [ C] //Proceedings of the 21HtInternational Symposium on Power Semiconductor Devices& 1C’s. Barcelona, Spain, 2009 ; 287 - 290.
  • 6HU D Q, WU Y, JIA Y P, et al. Modeling for internaltransparent collector IGBT [ C] // Proceedings of the 6thIEEE International Power Electronics and Motion ControlConference. Wuhan, China, 2009 : 281 -284.
  • 7MILLER G, SACK J. A new concept for a non punchthrough IGBT with MOSFET like switching characteristics[C] //Proceedings of the 20th IEEE Power ElectronicsSpecialists Annual Conference. Milwaukee. WI, USA,1989, 1: 21 -25.
  • 8KOPTA A, RAHIMO M, SCHLAPBACH U, et al. Limitations of the short circuit ruggedness of high-voltageIGBTs [ C] // Proceedings of the 21 *l InternationalSymposium on Power Semiconductor Devices & IC * s.Barcelona, Spain,2009: 33 -36.
  • 9LINDER S. Power semiconductors [ M]. Swiss: EPFLPress, 2006: 232 -241.
  • 10亢宝位.绝缘栅晶体管(IGBT)的失效[C]//中国电力电子产业高峰论坛.西安,中国,2009: 79 -86.

引证文献9

二级引证文献28

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部