高压LDMOS反相器功耗的计算

Calculation of high voltage LDMOS power dissipation

根据以前所建立的高压LDMOS宏模型,分析了用阱作为高阻漂移区的LDMOS组成的反相器,提出了计算其功耗的公式,从而解决了在高压LDMOS组成的功率集成电路设计中功耗无法估算的难题.通过半导体数值模拟软件Medici的仿真,可以得到计算结果与仿真的结果是一致的.最后根据功耗的计算公式,提出了一个减小电路功耗的方法.

An inverter consisting of high voltage LDMOS was analyzed based on the high voltage LDMOS macromodel established previously. The formulation was presented to solve the power dissipation of LDMOS power integrated circuits. The results are in good agreement with the simulation values by semiconductor numerical simulator Medici. Finally, the method of reducing power dissipation was discussed.