热处理温度对Cu-In薄膜微观结构的影响

Influence of heat treatment on microstructure of Cu-In film

采用电镀工艺制备了CIS太阳能电池的Cu-In预制薄膜,通过分析不同温度热处理后材料结构的变化,研究了Cu-In预制层薄膜的相变规律及其表面特征。实验结果表明:在433K温度下进行热处理后,Cu-In薄膜由单质In及少量Cu11In9构成,此时单质In熔化,凝固后其表面In颗粒长大;当热处理温度高于577K时,在表面富In区发生固液转变,薄膜表面更加致密。随着Cu和In原子相互扩散加剧,Cu11In9最终完全转变为Cu16In9。

The Cu-In precursor film for CIS solar cell was prepared by electrodeposition technique and the effects of treatment temperature on the transformation and morphology of Cu-In precursor films were investigated. The results show that Cu-In precursor films annealed at 433K are composed of In and Cu11In9, and In is melted and solidified to coarse granules. In-rich zones of the surface are melted and results in the compact surface of Cu-In precursor films when the precursor film is annealed at 577K. With the increase of mutual diffusion of Cu and In at higher temperature, all of Cu11In9 transforms to Cu16In9 .