脉冲分子镀制备铀靶方法研究

Preparation of Uranium Target by Pulse Molecular Plating

采用脉冲电沉积方法,以N,N-二甲基甲酰胺(DMF)体系为电镀介质,研究了电极距离、溶剂DMF的体积、沉积时间、铀的质量浓度、阴极材料等对镀层性能和铀沉积率的影响,得到在DMF中脉冲分子镀铀的最佳条件,制备得到的靶面平整、牢固。用扫描电镜分析了铀靶的形貌和组成,采用测厚仪分析了铀靶厚度的均匀性。结果表明,在脉冲电沉积中,铀是非均匀沉积,靶面密度为0.2～2.0 mg/cm^2。

Preparation of uniform and adherent uranium target by pulse molecular plating technique from N, N-dimethylformamide（DMF） is described. To determine the optimum conditions for the deposition of uranium, the parameters influencing the quality of the layers and the deposition yield were investigated, such as distance between the electrodes, mass concentration of uranium, deposition time and cathode material. The composition and morphological structure of the targets were characterized by scanning electron microscope. The uniformity was measured by thickness gauge. The results show that uranium is deposited non-uniformly and the thickness of the target is 0.2-2.0 mg/cm^2.