液相外延生长磁性石榴石薄膜中铋的分凝系数与生长率的关系

Growth Rate Dependence of Bismuth Segregation Coefficient in the Liquid phase Epitaxy of Magnetic Garnet Films

在Ｂｉ２Ｏ３－ＰｂＯ－Ｂ２Ｏ３复合助熔剂中，采用等温浸渍液相外延技术在ＧＧＧ基片的（１１１）面上生长了（Ｂｉ，Ａｌ）∶ＹＩＧ薄膜。通过调整过冷度和基片转速来改变薄膜的生长速率。测量了外延膜中铋的含量。给出了铋的分凝系数的表达式，并计算了铋的分凝系数。讨论了铋的分凝系数与生长率的定量关系。发现ＫＢｉ符合ＢＰＳ生长模型。

Epitaxial films of (Bi, Al)∶ YIG were grown on (111) Gd 3Ga 5O 12 substrates in Bi 2O 3 PbO B 2O 3 flux by using the liquid phase epitaxy technique. Growth rate was varied by adjusting supercooling and rotation rate. The Bismuth content in the films was determined. The expression of the segregation coefficient of Bismuth was defined, and the segregation coefficient of Bismuth was calculated. The quantitative relation between Bi segregation and growth rate was discussed. K Bi was found to obey the growth model of Burton, Prim, and Slichter.