摘要
用SiH4┐N2进行PECVD生长高质量SiN研究刘英坤李明月(电子工业部第十三研究所,石家庄,050051)1引言众所周知,氮化硅薄膜,尤其是低温等离子体淀积的氮化硅薄膜PECVD—SixNy,因其良好的物理化学性质和优越的制备工艺,在现代半导体器...
The photoluminescence(PL)and its excitation (PLE) spectra of liquid phase epitaxial growth GaP∶N wafer were measured by the u1tra violet fluorimetry (UVF) at room temperature.And the fluorescence spectra of the contamination impurities such as Fe,Cu and Cr which lead the green luminous efficiency to drop were observed also.In this paper the multi peak structure in the PL characteristic spectra of GaP∶N wafer and its corresponding relationship with the recombination emission of the isoelectronic centre exitations of N and N N pairs are described.
出处
《半导体情报》
1997年第4期47-49,共3页
Semiconductor Information
关键词
氮化硅
PECVD
半导体薄膜技术
GaP∶N wafer Far ultraviolet excitation PL and PLE spectra Fe impurity contamination