电子束蒸发制备CuAlO_2透明导电膜及光学性质

Fabrication and properties of p-CuAlO_2 films by e-beam evaporation

利用烧结的CuAlO2靶材运用电子束蒸发法沉积了p型CuAlO2薄膜样品。在空气中1000℃退火之后,薄膜样品出现了(006)定向结晶,且铜铝原子比满足化学计量。CuAlO2薄膜呈现了很好的透明性,500nm厚的薄膜样品在可见光范围透射率超过了80%。利用光谱分析,CuAlO2薄膜的光学禁带约为3.80eV,其平均折射率约为1.54,同其它方法制备的该薄膜的性能相近。薄膜样品室温电导率约为0.08S/cm。

p-Type CuAlO2 films were successfully prepared by e-beam evaporation with sintered targets. Preferential （006） oriented films were obtained after annealed at 1000℃in air. Stoichiometric Cu/Al atomic percentage ratio have been achieved. The transmittance of films was 80 % for the visible range with an average thickness of 500nm. The refractive index was about 1.54 and optical band gap was estimated to be 3.80eV. The room temperature conductivity of the films was of the order of 0. 08S/cm.