一种适用于互补双极技术的双层多晶硅自对准PNP晶体管的设计

Design of a double poly-silicon self-aligned PNP transistor for C-bipolar technology

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摘要通过仿真与实验设计出了一种高性能的双层多晶硅自对准PNP晶体管工艺流程,分析了关键工艺技术,器件性能达到fT=8.5 GHz,β=60,BVCEO=8 V。该工艺与已有的双层多晶硅自对准NPN晶体管工艺相兼容,可用于制造高性能的互补双极电路。 A high-performance double poly-silicon self-aligned PNP transistor process with .fT=8.5GHz,β-60 and BVCEO=8V is designed by simulations and experiments, and the key technologies are analyzed. The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricale high-performance complementary bipolar circuits.

作者李荣强谢正旺曾鹏

机构地区重庆邮电大学

出处《重庆邮电大学学报（自然科学版）》 2007年第6期669-673,共5页 Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)

关键词双层多晶硅自对准 PNP 互补双极 double poly-silicon self-aligned PNP complementary bipolar

分类号 TN710.2 [电子电信—电路与系统]

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重庆邮电大学学报（自然科学版）

2007年第6期

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一种适用于互补双极技术的双层多晶硅自对准PNP晶体管的设计

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