多种含硫溶液钝化(100)GaAs表面的实验研究

Research on (100) GaAs Surface Passivation with Sulf-solutions

为实现GaAs表面的钝化,以Na2S、(NH4)2S、CH3CSNH2为主要研究对象,通过对比实验研究得出较为理想的湿法钝化液。通过光致发光(PL)谱研究了(NH4)2S+叔丁醇、CH3CSNH2+NH4OH、CH3CSNH2+叔丁醇三种不同含硫溶液钝化(100)GaAs表面后的发光特性。PL谱测试发现,(NH4)2S+叔丁醇饱和溶液处理过的(100)GaAs表面光致发光强度最强,PL谱的相对发光强度是未做钝化处理的10倍左右。因此得出(NH4)2S+叔丁醇饱和溶液是较为理想的(100)GaAs表面钝化液。

The passivation of （100）GaAs surface was investigated by Na2S, （NH4 ）2S and CH3 CSNH2 solution to find optimal passivation methods. （NH4 ）2S ＋ t-C4HgOH, CH3CSNH2 ＋ NH4OH and CH3CSNH2 ＋ t-C4H9OH sulf-solutions have been used for passivation comparation of （100） GaAs surface by means of Ar^＋ laser excitated photoluminescence （PL）. The relative PL spectrum intensity of sample treated by （NH4 ）2S ＋ t-C4H9OH passivation is 10 times stronger than that of unpassivated samples. The results indicate that （NH4）2S ＋ t-C4HgOH solution has the better passivation effect on （100） GaAs surface.