用于MEMS器件的硅材料塞贝克系数测试结构

Test Structure of the Silicon Material Seebeck Coefficients for MEMS Devices

综述了微观尺度下利用MEMS结构测量硅材料塞贝克系数的已有工作。这些测试结构主要由电加热、电压测量和温度测量三部分构成,通过测量塞贝克电压和与之相对应的温度,从而获知塞贝克系数。加式测试结构的工艺大多与CMOS工艺兼容。指出这些方法原理简单、测量直接,但必须要求真空环境,尚无法满足普通大气环境下在线测试的要求。

The available methods of Seebeck coefficient of micro-scale material with MEMS structure were reviewed. The test structures consist mainly of a heater, a temperature gauge and a Seebeck voltage sensor. The Seebeck coefficient was obtained through measuring the voltage and the corresponding temperature. The test structures process is compatible with the CMOS process. These methods are simple in principle and easy in measurement, but they require a vacuum environment, thus prevent their application in a real on-line test in free air.