非晶硅太阳能电池i层厚度优化的数值模拟

Numerical simulation of i-layers thickness on a-Si:H p-i-n solar cell devices

应用AMPS-1D软件对非晶硅太阳能电池的J-V特性进行了模拟研究，重点模拟分析了i层厚度对P-i-n结构非晶硅太阳能电池特性参数的影响。

The AMPS-1D （ analysis of microelectronic and photonic structures） was used to module the light J- V characteristics of a-Si ： H p-i-n solar cell devices. The effects of the i-layers thickness on the light J-V characteristics have been examined.