用乙硅烷及固态锗源外延生长应变GeSi/Si合金

STRAINED Ge xSi 1-x /Si HETEROSTRUCTURES GROWN BY GSMBE USING DISILANE AND ELEMENTAL GERMANIUM

采用气态源分子束外延（ＧＳＭＢＥ）法成功地生长出应变ＧｅｘＳｉ１－ｘ／Ｓｉ异质结合金，所使用的源分别是乙硅烷和固态锗。用固态锗取代气态锗烷，既保留了生长中由氢化物裂解产生的氢原子在生长表面上的活化作用（ｓｕｒｆａｃｔａｎｔｅｆｆｅｃｔ），又利用了固态源炉通过挡板能够迅速切断分子束流的优点。样品的Ｘ射线双晶衍射，透射电子显微镜及光荧光测量表明ＧｅｘＳｉ１－ｘ合金具有较好的晶格完整性及平坦的异质结界面。

Pseudomorphic Si 1-x Ge x layers are grown in GSMBE system using gas source disilane and elemental germanium. This source combination is expected to have advantages of the surfactant effect by the use of disilane and the abrupt ON/OFF capability of germanium flux by the use of elemental germanium. Double crystal X ray diffraction, transmission electron microscopy and photoluminescence measurements were used to determine the germanium composition, crystalline quality and interface flatness. Results indicate that high quality Si 1-x Ge x/Si heterostructures can be grown with elemental Ge instead of gas source Ge in the GSMBE system.