摘要
对用硅烷－氢（ＳｉＨ４／Ｈ２）混合气体在Ｃｕ表面进行化学热处理获得的含硅涂层进行了抗氧化性研究．结果表明，纯铜表面含硅涂层的形成提高了材料的抗氧化性能．对含硅铜涂层的氧化机理进行了探讨．
The oxidation behavior of siliconized layer of copper formed by chemical reaction with SiH 4/H 2 mixture was studied.The results show that the formation of silicide layer enhances oxidation resistance of copper. After high temperature oxidation(600℃), a compact and homogeneous SiO 2 layer on silicide surface was formed, which effectively reduced the diffusion of oxygen atoms into the matrix(copper) because of the low diffusion coefficient of oxygen in silica. But the oxide layer formed at ambient temperature was mixtures of silica and copper oxide, and then the oxygen could diffuse more easily through this layer. Hence, there is no appreciable difference of the corrosion resistance between copper and the siliconized copper at ambient temperature.
出处
《腐蚀科学与防护技术》
CAS
CSCD
1997年第3期205-209,共5页
Corrosion Science and Protection Technology
基金
国家自然科学基金
