基于Charge Pump技术的低压高频Antiringing MOS开关驱动电路

Low voltage high frequency antiringing MOS switch driver circuit using Charge Pump technique

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摘要本文给出了一种基于Charge Pump适用于低压高频Antiringing MOS开关的驱动电路。该驱动电路工作电压最低可达1.8V,工作频率最高达5MHz。文章从Charge Pump及Antiringing的基本原理出发详细介绍了此驱动电路设计思想,并且给出最终设计电路。该电路基于Samsung 0.65-μm BiCMOS工艺设计,经过HSPICE仿真验证。 A low voltage high frequency antiringing MOS switch driver circuit using charge pump technique is presented in this paper. The power supply voltage of this driver circuit is as low as 1.8V, and the frequency is as high as 5MHz. This circuit is designed on the basis of 0.65-μm BiCMOS process from Samsung, and its performances have been successfully verified by HSPICE simulations.

作者来新泉陈富吉王虎刚

机构地区西安电子科技大学电路CAD研究所

出处《电路与系统学报》 CSCD 北大核心 2007年第6期50-53,共4页 Journal of Circuits and Systems

关键词低电压高频率 CHARGE PUMP Antiringing low voltage high frequency Charge Pump Antiringing

分类号 TN432 [电子电信—微电子学与固体电子学]

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1李亚军,来新泉,叶强,袁冰.High efficiency and low electromagnetic interference boost DC–DC converter[J].Journal of Semiconductors,2014,35(4):98-105. 被引量：3

电路与系统学报

2007年第6期

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基于Charge Pump技术的低压高频Antiringing MOS开关驱动电路

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