摘要
根据真空接触器对CuWAlTe电触头的性能要求,采用特有的熔渗技术,成功解决了制备CuWAlTe时Te挥发引起的Te含量低的问题。阐述了其技术难点,并对多种工艺方案进行了论证。所研制的触头材料达到性能要求,通过了型式实验。
Based the requirement of property of CuWAlTe, we adopted special high-temperature infiltrate technology to meet the need of vacuum contactor, successfully resolved the loss of Te content in electric-alloy and passed by normal test. In this paper, the process technology is analyzed and multi-methods are demonstrated in detail.
出处
《电工材料》
CAS
2007年第4期7-9,共3页
Electrical Engineering Materials
