摘要
A special thennat modeling tool, CrysVUn, which was developed by Crystal Growth Laboratory （CGL） of Fraunhofer Institute of Integrated Systems and Devices Technology in Erlangen of Germany, was used for numerical analysis of growth interface situation. The heat transportation, argon flow and melt convection have been considered. Cauchy＇s first and second laws of motion have been the governing partial equations for stress calculation. The measurement results and simulation results were compared and the interface shape and thennat stress distribution during 300 mm Czochralski （CZ） silicon crystal growth with different growth rates were predicted.
A special thennat modeling tool, CrysVUn, which was developed by Crystal Growth Laboratory （CGL） of Fraunhofer Institute of Integrated Systems and Devices Technology in Erlangen of Germany, was used for numerical analysis of growth interface situation. The heat transportation, argon flow and melt convection have been considered. Cauchy＇s first and second laws of motion have been the governing partial equations for stress calculation. The measurement results and simulation results were compared and the interface shape and thennat stress distribution during 300 mm Czochralski （CZ） silicon crystal growth with different growth rates were predicted.
基金
the International Scientific and Technical Corporation Major Planning Project (No. 2005DFA5105).
