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基于超高密度信息存储薄膜制备的研究进展 被引量:1

Research Progress in Fabrication of Ultrahigh Density Information Storage Films
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摘要 信息技术的发展要求存储器件必须具备超高存储密度、超快的存取速率。存储介质是高密度信息存储研究中的基本问题,目前几乎所有的超高密度存储技术都是在薄膜介质上实现的。薄膜的性质除依赖于存储介质材料外还依赖于薄膜的制备技术。从存储介质薄膜的制备角度介绍了超高密度信息存储的研究进展。 The development of information technology requires that the properties of data storage devices should be ultrahigh in density and access rate. Most of the ultrahigh density information technologies are realized on the film media. The properties of the films depend not only on the materials of the storage media but also on the fabrication methods of the films. The research progress in this field is reviewed from the viewpoint of fabrication of storage media films.
出处 《材料导报》 EI CAS CSCD 北大核心 2007年第11期4-6,共3页 Materials Reports
基金 国家自然科学基金(50472092 50672008) 教育部博士点专项科研基金(20050008028)
关键词 超高密度信息存储 存储介质薄膜 薄膜制备 扫描探针显微镜 ultrahigh density data storage, films of storage media, fabrication of films, scanning probe microscope
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参考文献28

  • 1华中一.关于发展纳米技术的几点看法[J].材料导报,2001,15(4):3-4. 被引量:7
  • 2白春礼.纳米科技及其发展前景[J].科学通报,2001,46(2):89-92. 被引量:124
  • 3Sato A, Momose S, Tsukamoto Y. Nanometer-scale recording, erasing, and reproducing using scanning tunneling microscopy [J]. J Vac Sci Techn, 1995, B13(6) :2832
  • 4Nishimura T, Iyoki M, Sadayama S. Observation of recording pits on phase-change film using a scanning probe microscope [J]. Ultramicroscopy, 2002, 91:119
  • 5Binnig G, Despont M, Drechsler U, et al. Ultrahigh-density atomic force microscopy data storage with erase capability [J]. Appl Phys Lett, 1999, 74(9) :1329
  • 6Gao H J,Ma L P,Zhang H X. Using a new kind of organic complex system of electrical bistability for ultrahigh density data storage [J]. J Vac Sci Techn, 1997, B15 : 1581
  • 7Gao H J,Sohlberg K, Xue Z Q, et al. Reversible, nanometer-scale conductance transitions in an organic complex[J]. Phys Rev Lett, 2000, 84(8) :1780
  • 8Li J C,Xue X L, Li X L, et al. Parallel molecular stacks of organic thin film with electrical bistability[J]. Appl Phys Lett,2000, 76(18) :2532
  • 9Jiang G Y, Michinobu T, Yuan W F, et al. Crystalline thin film of a donor-substituted eyanoethynylethene for nanoseale data recording through intermoleeular charge-transfer interactions[J]. Adv Mater, 2005, 17:2170
  • 10Ma L P,Yang W J,Xue Z Q, et al. Data storage with 0. 7nm recording marks on a crystalline organic thin film by a scanning tunneling microscope[J]. Appl Phys Lett, 1998, 73 (6):850

二级参考文献14

  • 1Dediraju G R.Nature,2001,412:397
  • 2Wen Y Q,Wang J X,Hu J P et al.Adv.Mater.,2006,18:1983
  • 3Wen Y Q,Song Y L,Jiang G Y et al.Adv.Mater.,2004,16:2018
  • 4Haghbeen K,Tan E W.J.Org.Chem.,1998,63:4503
  • 5Barth J V,Weckesser J,Cai C et al.Angew.Chem.Int.Ed.,2000,39:1230
  • 6Lopatin D V,Rodaev V V,Umrikhin A V et al.J.Mater.Chem.,2005,15:657
  • 7Vettiger P et al.IBM J.Res.Develop.,2000,44:323
  • 8Fujita W,Awage K.Science,1999,286:261
  • 9Sato A,Tsukamoto Y.Adv.Mater.,1994,6:79
  • 10Kim K Y,Lee B.Opt.Lett.,2001,26:1800

共引文献132

同被引文献61

  • 1姜桂元,温永强,吴惠萌,元文芳,商艳丽,高鸿钧,宋延林.超高密度电学信息存储研究进展[J].物理,2006,35(9):773-778. 被引量:3
  • 2姜桂元,元文芳,温永强,高鸿钧,宋延林.基于扫描探针显微镜(SPM)的高密度信息存储[J].化学进展,2007,19(6):1034-1040. 被引量:3
  • 3ROTH K M, LINDSAY J S, BOCIAN D F, et al. Characterization of charge storage in redox-active self-assembled monolayers [J]. Langmuir, 2002, 18 (10): 4030-4040.
  • 4JIAO J Y, ANARIBA F, TIZNADO H, et al. Stepwise formation and characterization of covalently linked multiporphyrirrimide architectures on Si (100) [J]. Journal of the American Chemical Society, 2006, 128 (21): 6965 -6974.
  • 5PADMAJA K, YOUNGBLOOD W J, WEI L, et al. Triple-decker sandwich compounds bearing compact triallyl tripods for molecular information storage applications [J]. Inorganic Chemistry, 2006, 45 (14): 5479- 5492.
  • 6WILLNER I, KATZ E. Integration of layered redox proteins and conductive supports for bioelectronic applications [J]. Angewandte Chemie International Edition, 2000, 39 (7): 1180-1218.
  • 7LIKHAREV K K. Single-electron devices and their applications [J]. Proceedings of the IEEE, 1999, 87 (4): 606-632.
  • 8JUNG J H, JIN J Y, LEE I, et al. Memory effect of ZnO nanocrystals embedded in an insulating polyimide layer [J]. Applied Physical Letters, 2006, 88 (11): 112107- 112109.
  • 9MORKOC H, TAUR Y. A view of nanscale electronic devices [J]. Journal of the Korean Physical Society, 2003, 42:S555 - S573.
  • 10FEYNMAN R. There is plenty of room at the bottom [J]. Engineering Sciences, 1960, 23 (22): 55-59.

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