摘要
提高发光二极管的发光效率是当前的一个研究热点。简要介绍了从芯片技术角度提高发光二极管(LED)外量子效率的几种途径,生长分布布拉格反射层结构、制作透明衬底、衬底剥离技术、倒装芯片技术、表面粗化技术、异形芯片技术、采用光子晶体结构等。此外还介绍了发光材料、能带结构以及工艺对外量子效率的影响。
The research on improving the light-emitting efficiency of light-emitting-diodes is a hotspot. Several approaches to enhance the external quantum efficiency of LED are discussed, such as growth of distributed Bragg reflector （DBR） tabricat-ing, transparent substrates technology, surface lift-off, flip-chip, surface roughening, unusual chip and photonic crystal structure. The effects of lightemitting materials, energy gap and process condition on the external quantum efficiency are also discussed.
出处
《激光与光电子学进展》
CSCD
北大核心
2007年第12期61-67,共7页
Laser & Optoelectronics Progress
基金
上海市浦东新区科技发展基金(PKJ2005-59)资助课题
关键词
发光二极管
外量子效率
light-emitting diodes
external quantum efficiency
