氢化发生ICP-OES测定高纯氧化铌中铋、硒、碲量

Determination of Bismuth Selenium and Tellurium in High-Purity Niobium Pentoxide by HG-ICP-OES

提出了氢化发生电感耦合等离子体发射光谱法(HG-ICP-OES)测定高纯氧化铌中铋、硒、碲的分析方法。优化了氢化条件,选择了最佳仪器参数,研究了氧化铌基体对氢化物测定的影响。铋、硒、碲的检出限分别为0.1、0.2、3μg/g,加标回收率为90%～120%,相对标准偏差小于10%。

A method has been proposed for determination of Bi, Se, Te in high-purity niobium pentoxide by HG-ICP-OES. The hydrogenating agent and operation condition has been optimized. The matrix interference has been studied. The LOD is 0.1μg/g for Bi, 0.2μg/g for Se, 3μg/g for Te. The standard addition recovery is 90%-120%, RSD is below 10%.