基于变化电子流向的一种高压VDMOS静态物理模型

A Steady State Physical Model Based on the Varied Electron Flow Direction for High-voltage VDMOS

研究了高压VDMOS内部电子流向的变化,提出了其近似解析表达式,在此基础之上,求得了电子密度分布变化的解析表达式,从而建立了高压VDMOS的一种改进静态物理模型。计算结果表明,由于这一模型是基于更为合理的电子流向变化和电子密度分布变化的解析表达式而建立的,所以与Yeong-seuk Kim等人模型和参考文献[2]的模型相比,在较大的工作电压范围内,其计算精度的提高都是非常显著的。

In the paper, the variation of the electron flow direction is studied, and its analytical formula is presented approximately. Furthermore, an analytical formula based on it is obtained for the variation of the electron concentration distribution. Consequently an improved steady-state physical model for high-voltage VDMOS is proposed. The calculation results show that because the proposed model is based on the more proper analytical formulas for both the variation of the electron flow direction and the variation of the electron concentration distribution, it is more accurate than both the model of Yeong-seuk Kim et al and the model of ref. [2] within a wide range of operating voltage.