摘要
模拟计算了光的入射角度与反射率的关系,当光的入射角度大于23°时,发生全反射,无论是否在器件表面生长增透膜,这时的光都无法从器件顶部出射表面提取出来。研究了使用等离子体增强化学气相沉积法(PECVD)在已经制备了n电极和p电极的GaN基LED上制备钝化膜,分析了SiON和SiN_x膜沉积对于器件的光输出功率的影响。通过实验证明,在器件上沉积SiON后,光输出功率增加。
In this paper, we simulate the relationship between the reflectivity and the light incident angle. When the incident angle is more than 23°, the light can not be extracted from LED top emitting surface. We fabricate SiON and SiN, films respectively at low temperature （100 ℃） through Plasma Enhanced Chemical Vapor Deposition （PECVD） to serve as the passivation layer of GaN-LEDs, and then compare their light output power. The light output power of the LED improved greatly after depositing the SiON passivation layer.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2007年第4期558-561,共4页
Research & Progress of SSE
