期刊文献+

X-波段混合集成平衡I-Q矢量调制器 被引量:2

X-Band hybrid integrated balanced vector modulator
原文传递
导出
摘要 在介电常数为2.20±0.02,厚度为254μm的Rogers5880衬底上用混合集成技术制作了9.5~10.5GHz平衡I-Q矢量调制器。测试结果表明:各状态插入损耗为(7.5±1)dB,回波损耗大于16dB,均方根(RMS)相位误差小于5°,各状态之间的幅度不平衡小于0.5dB,可实现对9.5~10.5GHz载波信号的直接QPSK调制。文中还提出电路性能优化的一些方法。 A 9.5 - 10.5 GHz balanced I - Q vector modulator was designed and fabricated on Rogers5880 with a dielectric constant of 2.20 ± 0.02 and thickness of 254μm. Measured results are : the insertion loss of balanced I - Q vector modulator is (7.5 ± 1 ) dB, the return loss of the circuit is above 16dB, and RMS phase error is less than 5°, the maximum amplitude unbalance is 0.5dB. Some measures to optimize circuit performance were proposed at the end.
出处 《功能材料与器件学报》 EI CAS CSCD 北大核心 2007年第6期615-618,共4页 Journal of Functional Materials and Devices
基金 上海市应用材料研究与发展基金(No.0503)
关键词 Rogers5880 I-Q矢量调制器 BPSK调制器 Rogers5880 I-Q vector modulator BPSK modulator
  • 相关文献

参考文献7

  • 1Cannistraro V, Liou J - C, McCarter S. Direct modulation lowers VSAT equipment costs [ J ]. Microwaves and RF, Aug, 1990,99 - 101.
  • 2Kumar S, Directly modulated VSAT transmitters [ J ]. Microwave J, 1990,255 - 264.
  • 3Telliez,et al, A compact monolithic microwave demodulatormodulator for 64 - QAM digital radio links [ J ]. IEEE Trans Microwave Theory Tech, 1991,39:1947 -1954.
  • 4Pyndiah R, Jean P, Leblanc R,et al. GaAs monolithic direct (1 -2.8) GHz Q. P. S. K. modulator[a], in 19th European Microwave Conf. Proc [ c ]. 1989,597 -602.
  • 5Nam S, Karacaoglu U, Yerli C F O, et al. GaAs MMIC chipset for 17/18 GHz indoor radio LAN's[a]. in 26th Eu2 ropean Microwave Conf. Proc[c]. 1996,960-963.
  • 6Adler Z,Smilowitz B. Octave band high precision balanced modulator[ A]. in 1984 IEEE MTT - S Dig[ C]. 375 - 377.
  • 7罗源,李凌云,钱蓉,喻筱静,孙晓玮.基于高阻硅衬底的微波传输线和数字移相器[J].功能材料与器件学报,2007,13(2):155-158. 被引量:3

二级参考文献6

  • 1Buechler J,Kasper E,Russer P,et al.Silicon high-resistivity substrate millimeter wave technology[J].IEEE Trans Microwave Theory Tech,1986,34:1516-1521.
  • 2Reyes A C,El-Ghazaly S M,Dom S,et al.Silicon as a microwave substrate[A].IEEE MTT-S Symp Dig[C].1994.
  • 3Reyes A C,El-Ghazaly S M,Dom S J,et al.Coplanar waveguides and microwave inductors on silicon substrates[J].IEEE Trans Microwave Theory Tech,1995,43:2016-2022.
  • 4Gamble H S,Armstrong B M,Mitchell S J N,et al.Low-loss CPW line on surface stabilized high-resistivity silicon[J].IEEE Microwave and Guided Wave Letters,1999,9:95-397.
  • 5薛羽.X波段五位移相器和小功率开关HMIC的研制[J].电子元件与材料,1999,18(5):32-33. 被引量:1
  • 6申华军,杨瑞霞,王同祥,吴阿惠,谢媛媛,邱旭.X波段GaAs单片五位数字移相器[J].电子器件,2003,26(2):229-232. 被引量:4

共引文献2

同被引文献18

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部