摘要
利用铝阳极氧化方法对微晶玻璃基板上的多层铝膜进行选择性氧化,制备了4层布线的高密度MCM-D基板,对氧化得到的多孔型氧化铝介质膜的绝缘及介电性能进行了研究。实验结果表明:多层布线铝与氧化铝结合性好,层间和同层多孔氧化铝绝缘电阻分别达到10~9Ω和10^(11)Ω以上;多孔型氧化铝的相对介电常数和损耗分别为5.73和0.022(1 MHz);导带、互连通孔与绝缘层所形成的层间通孔互连结构共面性好,具有良好的电互连性能。多孔型氧化铝介质膜适用于制备高密度MCM—D基板。
Multi aluminum films on glass plate were selectively anodized to fabricate high density MCM - D ( multi - chip module deposition) substrate. The insulation property and the dielectric property of porous anodic alumina films were studied. The result shows that the cohesion between aluminum and porous alumina is good. The insulation resistance of interlayers and same layers were 10^9Ω and 10^11Ω respectively. The dielectric constant and the dissipation factor at 1MHz was 5.73 and 0.022. The conductive lines and vias and the insulation layers are coplanar. The interlayer vias have good electronic interconnection. The dielectric film of porous anodic alumina is suitable for MCM - D substrate fabrication.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2007年第6期619-624,共6页
Journal of Functional Materials and Devices
关键词
多孔型氧化铝膜
高密度封装
绝缘性能
porous alumina anodic film
High density packaging
insulation property