摘要
This paper presents a new technique in the high dielectric constant composite oxide film preparation. On the basis of nano-compsite high dielectric constant aluminum oxide fdm growth technology, a new idea of adulterating Si oxide species into the aluminum composite film was proposed. As a result, the specific capacitance and withstanding voltage of the composite oxide film formed at the anodizing voltage of 20V are enhanced, and the leakage current of the aluminum composite oxide fdm is reduced through incorporation of Si oxide species.
This paper presents a new technique in the high dielectric constant composite oxide film preparation. On the basis of nano-compsite high dielectric constant aluminum oxide fdm growth technology, a new idea of adulterating Si oxide species into the aluminum composite film was proposed. As a result, the specific capacitance and withstanding voltage of the composite oxide film formed at the anodizing voltage of 20V are enhanced, and the leakage current of the aluminum composite oxide fdm is reduced through incorporation of Si oxide species.
基金
This work was supported by the National Nature Science Foundation of China under Grant No.60601006.
