摘要
In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li^＋, K^＋, Ca^2＋, Al^3＋ and Mg^2＋ doping on the dielectric properties of silicon nitride are also estimated.
In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li^＋, K^＋, Ca^2＋, Al^3＋ and Mg^2＋ doping on the dielectric properties of silicon nitride are also estimated.
