期刊文献+

K9F1208在DS87C520单片机系统中的应用 被引量:2

The application of NAND Flash K9F1208 in DS87C520 singlechip system
下载PDF
导出
摘要 介绍了Samsung公司生产的NAND Flash K9F1208的特性:存储结构为528字节×32页×4096块,工作电压为2.7~3.6V,可实现页的读取、写入、擦除等操作;结合时序讨论了K9F1208的页读取/页写入操作模式;分析了单片机DS87C520的特点:高速,双数据指针,13个中断源,电源电压下降自动复位,可编程看门狗定时器;给出了KgF1208与DS87C520的硬件连接、程序框图和部分程序代码.提出了任何一款数据总线宽度在8位及8位以上的计算机系统都能使用K9F1208的方法,从而实现大容量存储系统的扩展. This article introduces the NAND Flash K9F1208's characteristics produced by Samsung Corp, in which memory organization is 528bytes × 32pages× 4096blocks,the voltage supply is 2.7-3.6 V,and the page read and program operation can be realized. The page read and program operation mode was discussed combined sequence. The characteristics of DS87C520 singlechip system with high speed, double data pointer, 13 interrupt sources, power supply decline auto reset, and watch dog timer were analyzed. The connection diagram of hardware and software design and some program codes were given. The innovation of this paper is the author proposed an universal method that any computer system with data bus width at 8 bit and upwards can use K9F1208,implemented the high capacity memory system extend accordingly.
作者 赵振华 刘芳
出处 《武汉工程大学学报》 CAS 2007年第3期71-75,共5页 Journal of Wuhan Institute of Technology
关键词 NAND FLASH DS87C520单片机 接口 NAND Flash DS87C520 singlechip interface
  • 相关文献

参考文献2

二级参考文献3

  • 1Jeff Child.Flash memory evolves for post-PC era applications; embedded syst.dev.1999
  • 2[美]Ashok K.Sharma.Advanced semiconductor memories:Architectures,designs,and applications.John Wiley & sons Inc..2002.
  • 3Robert F.Pierret.Semiconductor device fundamentals.Prentice Hall 1st edition.1995

共引文献9

同被引文献10

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部