摘要
SU-8光胶因具有良好的光刻性能,并可获得稳定的高深宽比而在微加工领域得到了广泛的应用。众多研究采用不同的光源对其进行了多种光刻研究,本文应用355nm激光对SU-8胶进行曝光,分别采用XPS谱和FT-IR谱分析了SU-8胶与激光相互作用过程中,355nm激光对SU-8胶的作用以及反应前后主要成分含量、分子结构的变化,初步探讨了SU-8胶中激光曝光能量与透入深度的关系。
There is a widespread availability of a photoresist named SU- 8 in the microelectromechanical systems （MEMS）, this is duo to its outstanding lithographic performance and its ability for use in the fabrication of stable structures with very high aspect ratio. Various lithographic studies on SU-8 have been performed using a variety of light sources. In this paper, we use 355nm laser as SU - 8 lithography, study it respectively by X - ray photoelectron spectroscopy （XPS） and fourier transform infrared （FT- IR） spectroscopy. The effect, the percentage composition and molecular constitution of the SU - 8 resist for 355 nm laser lithography are obtained. The paper also make a first study of the relation between the laser exposure dose and the penetrating depth.
出处
《光散射学报》
2007年第4期363-368,共6页
The Journal of Light Scattering
