Damage Accumulation in GaN Single Crystals Induced by Slow Highly-charged Heavy Ions
Damage Accumulation in GaN Single Crystals Induced by Slow Highly-charged Heavy Ions
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1Zhang Liqing Zhang Chonghong Yang Yitao Zhou Lihong Song Shujian Sun Youmei.Surface Swelling of GaN Irradiated by Highly Charged Ar^q＋ Ions[J].近代物理研究所和兰州重离子加速器实验室年报：英文版,2007(1):70-70.
-
2Observation of a Charged Charmoniumlike Structure at BESIII[J].Bulletin of the Chinese Academy of Sciences,2013,27(4):194-195.
-
3袁愿林,姚昌胜,王果,陆敏.SiO_2钝化层对GaN基PIN结构核探测器漏电流的影响[J].固体电子学研究与进展,2012,32(2):110-114. 被引量：3
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4Cai Xiaohong Yu Deyang Lu Rongchun Shao Caojie Lu Jun Ruan Fangfang Zhang Hongqiang Cui Ying Xu Xu Shao Jianxiong Ding Baowei Yang Zhihu Chen Ximeng.X-ray Emission from Zr, Mo, In and Pb Targets Bombarded by Slow Highly Charged Ar^(q+) (q=13, 14, 15, 16) Ions[J].近代物理研究所和兰州重离子加速器实验室年报：英文版,2004(1):110-111.
-
5Fast-slow Scintillator Phoswitch on MUDAL[J].近代物理研究所和兰州重离子加速器实验室年报：英文版,2000(1):55-55.
-
6Shi Jian Yang Jiancheng Xia Jiawen Yuan Youjin Chai Weiping Li Jie Yin Dayu Li Peng Mao Ruishi Zhao Tiecheng.Feedback of Slow Extraction in CSRm[J].IMP & HIRFL Annual Report,2011(1):218-218.
-
7何博文,贺朝会,申帅帅,陈袁妙梁.质子在氮化镓中产生位移损伤的Geant4模拟[J].原子能科学技术,2017,51(3):543-548. 被引量：3
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8陆敏,张国光,付凯,于国浩.Gallium Nitride Room Temperature α Particle Detectors[J].Chinese Physics Letters,2010,27(5):69-71. 被引量：3
-
9E.Galutschek,E.Salzborn,F.Aumayr,HP.Winter.Compact,Low-Cost,14.5GHz All-Permanent Magnet Field ECR Ion Source[J].Chinese Physics C,2007,31(S1):66-69.
-
10S.Masilla Moses Kennedy.Thermoluminescence studies on γ-irradiated CaF_2:Dy:Pb:Na single crystals[J].Journal of Rare Earths,2009,27(2):187-191. 被引量：2
