期刊文献+

纳米催化剂Pt/C的X射线衍射线形分析 被引量:2

X-ray diffraction line-profile analysis of nanocatalyst Pt/C
下载PDF
导出
摘要 X射线衍射线形与晶体材料的微观结构密切相关.在晶粒尺寸衍射线形和微应变衍射线形可由Voigt函数近似描述的前提下,本文较详细地论述了由X射线衍射线形分析获取晶粒尺寸和位错等微观结构信息的方法.采用这种方法,对乙二醇还原法制备的Pt/C催化剂进行了X射线衍射线形分析.样品晶粒尺寸分布的对数正态均值为0.95 nm,对数正态方差为0.37.X射线衍射线形分析所得晶粒尺寸分布与透射电镜的测试结果符合较好.对样品的衍射线形积分宽度进行细致的比较,发现存在各向异性展宽现象.如果衍射线的各向异性展宽主要是由伯格斯矢量为1/2〈110〉的位错引起,可进一步计算位错密度值.结果表明,位错组态无论是螺型位错还是刃型位错,位错密度值的量级均约为1015/m2. X-ray diffraction line-profile is closely related with microstructure of crystalline material. Under the assumption that crystallite size and microstrain diffraction line-profiles can be approximated with the Voigt function, the method of X-ray diffraction line-profile analysis, used to determine, microstructural information of crystallite size and dislocation, is described in detail. With this procedure, nanocatalyst Pt/C produced by glycol synthesis method is investigated by X-ray diffraction line-profile analysis. The lognormal mean of the sample crystallite size is 0.95 nm, and the lognormal variance is 0.37. The crystallite size distribution from X-ray diffraction line-profile analysis is well consistent with transmission electron microscopy observations. The integral breadths of the sample diffraction line-profiles are compared, anisotropic diffraction line broaden- ing is found. If such a phenomenon is caused by the dislocations of Burgers vector 1/2(110), the value of the dislocation density can be calculated. The results show, whether the dislocation character is screw or edge, the order of the dislocation density is about 1015/m^2.
出处 《原子与分子物理学报》 CAS CSCD 北大核心 2007年第6期1147-1154,共8页 Journal of Atomic and Molecular Physics
基金 中国工程物理研究院科学技术基金(20040209)
关键词 PT/C X射线衍射线形分析 晶粒尺寸 各向异性微应变 位错 Pt/C X-ray diffraetion line-profile analysis crystallite size distribution anisotropic microstrain dislocation
  • 相关文献

参考文献25

  • 1Klug H P, Alexander L E. X-ray diffraction procedures for polycrystalline and amorphous materials [M]. New York: Wiley, 1974.
  • 2Balzar D, Popovic S. Reliability of the simplified integral-breadth methods in diffraction line-broadening analysis[J].J. Appl. Cryst., 1996, 29-16.
  • 3Warren B E. X-ray diffraction [M]. Reading: Addison-Wesley, 1969.
  • 4Popa N C, Balzar D. An analytical approximation for a size-broadened profile given by the lognormal and gamma distributions[ J ]. J . Appl . Cryst,2002, 35 : 338.
  • 5Ida T, Shimazaki S, Hibino H, et al. Diffraction peak profiles from spherical crystallites with lognormal size distribution[J].J. Appl. Cryst., 2003, 36:1107.
  • 6Balzar D. Profile fitting of X-ray diffraction lines and Fourier analysis of broadening [ J ]. J. Appl. Cryst. , 1992, 25:559.
  • 7Balzar D. Voigt-function modeling in Fourier analysis of size-and strain-broadened X- ray diffraction peaks[ J ]. J. Appl. Cryst., 1993, 26 : 97.
  • 8Balzar D.Voigt-function model in diffraction line-broadening analysis[C]//Snyder R,Fiala J,Bunge H J.Defect and microstructure analysis by diffraction.IUCr/Oxford:University Press,1999.
  • 9Langford J I, Louer D, Scardi P. Effect of a crystallite size distribution on X-ray difftaction line profiles and whole-powder-pattern fitting [ J ]. J. Appl. Cryst, 2000, 33-964.
  • 10樊志剑,陈波,孙光爱,薛艳杰,陈东风,张晓安.LaNi_5D_x(x=0,0·3)化合物的中子粉末衍射研究[J].原子能科学技术,2006,40(1):111-115. 被引量:3

二级参考文献20

  • 1Lartigue C, Le Bail A, Percheron-Cuegan A. A new study of the structure of LaNi5D6.7 using a modified Rietveld method for the refinement of neutron powder diffraction data[J]. J. Less-Common Met., 1987,129:65-76.
  • 2Thompson P, Reilly J J, Hasting J M. The accommodation of strain and particle size broadening in Rietveld refinment; its application to de-deuterided LaNi5 alloy[J]. J. Less-Common Met., 1987,129:105-114.
  • 3Latroche M, Rodriguez-Carvajal J, et al. Structural studies of LaNi4CoD6.11 and LaNi3.55 Mn0.4Al0.3 Co0.75D5.57 by means of neutron powder diffraction [J]. J.Alloys Comp. , 1995,218:64-72.
  • 4Kisi E H, Buckley C E, Gray E M. The hydrogen activation of LaNi5 [J]. J. Alloys Comp., 1992,185: 369-384.
  • 5Wu E, Gray E Mac A, Kisi E H. Modelling dislocationinduced anisotropic line broadening in Rietveld refinements using a Voigt function. Ⅱ. application to neutron powder diffraction data[J]. J. Appl. Cryst.,1998,31:363~368.
  • 6Rietveld H M. A profile refinement method for nuclear and magnetic structures[J]. J. Appl. Cryst., 1969,2: 65-71.
  • 7Young R A, Prince E, Sparks R A. Suggested guidelines for the publication of Rietveld analyses and pattern decompostion studies[J]. J. Appl. Cryst., 1982,15:357-359.
  • 8Caglioti G, Paoletti A, Ricci F P. Choice of collimators for a crystal spectrometer for neutron diffraction [J].Nucl. Instrum., 1958,3:223-228.
  • 9Thompson P, Cox D E, Hastings J B. Rietveld refinement of Debye-Scherrer synchrotron X-ray data from Al2O3[J]. J. Appl. Cryst., 1987,20:79-83
  • 10Howard C J. The approximation of asymmetric neutron powder diffraction peaks by sums of Gaussians[J]. J.Appl. Cryst., 1982,15: 615 - 620.

共引文献2

同被引文献20

  • 1Haque M S,Naseem H A,Malshe A P,et al.A study of stress in microwave plasma chemical vapor deposited diamond films using X-ray diffraction[J].Chem..Vap.Deposition,1997,3(3):129.
  • 2Schafer L,Jiang X,Klages C P.In-situ measuring of stress development in diamond thin films[C] //Tzeng Y,Yoshikawa M,Murakawa M,A.Feldman(Eds.),Applications of Diamond Film and Related Materials.Amsterdam:Elsevier,1991:121.
  • 3Kim J G,Yu J,Cho D H,et al.Calculation of intrinsic stress by creep deformation of a Si substrate on chemical vapor deposited diamond films[J].Dismond Relat.Mater.,2000,9(1):61.
  • 4Yu J,Kim J G,Chung J O,et al.An elastic/plastic analysis of the intrinsic stresses in chemical vapor deposited diamond films on silicon substrates[J].J.Appl.Phys.,2000,88(3):1688.
  • 5Choi S K,Jung D Y,Choi H M.Intrinsic stress and its relaxation in diamond film deposited by hot filament chemical vapor deposition[J].J.Vaccum Sci.Technol.A,1996,14(1):165.
  • 6Kim J G,Yu J.Measurement of residual stress in diamond films obtained using chemical vapor deposition[J].J pn.J.Appl.Phys.,1998,37(7B):L890.
  • 7Baglio J A,Farnsworth B C,Hankin S,et al.Studies of stress related issues in microwave CVD dismond on 100 silicon substrates[J].Thin Solid Films,1992,212(1-2):212180.
  • 8Knight D S,White W B.Characterization of diamond films by Raman spectroscopy[J].J.Mater Res.,1989,4(2):385.
  • 9Vlasov I I,Ralchenko V G,Obraztsova E D,et al.Stress mapping of chemical-vapor-deposited diamond film surface by micro-Raman spectroscopy[J].Appl.Phys.Lett.,1997,71(13):1789.
  • 10Damme N S V,Nagle D C,Winzer S R.Stress in thick diamond films deposited on silicon[J].Appl.Phys.Lett.,1991,58(25):2919.

引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部