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硅—蓝宝石高温大量程压力传感器设计 被引量:8

Design of high temperature wide range silicon-on-sapphire pressure sensor
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摘要 介绍了一种硅-蓝宝石高温大量程压力传感器的设计,提出了采用小直径C型膜片的一体化结构,通过合理排布力敏电阻条位置,能够制作出高精度大量程压力传感器。采用该设计研制出了量程分别为60MPa和100MPa压力传感器,其工作温度范围为-50-350℃;满量程输出≥100mV;精度优于0.1%;迟滞与重复性均优于0.05%FS。 The design of a kind of silicon-on-sapphire pressure sensor with high temperature and wide operation range is introduced. A small diameter compacted structure with C-shaped diaphragm is brought forward. Due to the properly arrangement of force sensitive resistances, high precision and wide operation range pressure sensor can be fabricated. By the design method,the pressure sensors with 60 MPa and 100 MPa operation range are studied and fabricated, hsoperation temperature is -50 -350℃;full scale output ≥100 mV; precision is better than 0.1% ; hysteresis and repeatability are better than 0.05 % FS.
出处 《传感器与微系统》 CSCD 北大核心 2007年第12期97-99,共3页 Transducer and Microsystem Technologies
关键词 硅-蓝宝石 压力传感器 结构设计 silicon on sapphire pressure sensor structure design
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参考文献4

  • 1Stuchebnikov V M. Silicon-on-sapphire structures as a material for piezoresistive mechanical transducers Journal of communications technology and electronics [ J ]. Translated from Radiotekhnikai Elektronika,2005,50 ( 6 ) :678-696.
  • 2Toshiyuki Nakamura,Hideaki Matsuhashi. Silicon-on-sapphire (SOS) device technology[J], Oki Technical Review,2004,71(4) :67 -69.
  • 3Burgener M L, Reedy R E. Minimum charge FET fabricated on an uitrathin silicon on a sapphire wafer: United States Patent, 416. 043[ P], 1995 -12 -20.
  • 4Nagatomo Y, Reedy R E. Latest trends of SOS ( silicon on sapphil) technology[ J]. Denshi Zairgo,2003,42(5) :1-8.

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