摘要
采用射频磁控反应溅射工艺,在Si(400)衬底上制备了高c轴取向的AlN薄膜。用X射线衍射仪(XRD)分析了薄膜特征。研究了不同的Ar/N2比、衬底偏压、工作压强对AlN薄膜c轴择优取向的影响。研究了AlN薄膜在以氮终止的硅衬底和纯净硅衬底两种表面状态的生长机制,发现在以氮终止的硅衬底表面生长的AlN薄膜非常容易得到c轴择优取向的AlN薄膜。
Highly c-axis oriented piezoelectric A/N film were prepared on single-crystal Si（400） substrate by radio frequency （R. F. ） magnetron sputtering technique. The dependences of the c-axis oritentation of the AlN films on the negative blase, gas pressure,gas ratio were studied. The growth mechanisms of AlN crystallites on different surface states of Si substrate were also analyzed. It was found tha AlN films deposited at nitrogen-terminated Si substates have highly c-axis selective oritentation.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2007年第12期1430-1434,共5页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(60576011)
天津市自然基金资助项目(05YFJZJC00400
06TXTJJC14701)
天津市教委基金(2004ZD01)
关键词
ALN薄膜
射频(R.F.)
择优取向
氮终止的硅衬底
AlN thin films
radio frequency（P,. F. ）
magentron sputtering
preferred orientation
nitrogen-terminated Si substrates
