用热丝法制备优质稳定非晶硅薄膜的研究

HIGH QUALITY AMORPHOUS SILICON FILMS FABRICATION BY HOT WIRE CHEMICAL VAPOUR DEPOSITION TECHNIQUE

系统地研究了低压热丝化学汽相沉积技术中沉积气压、衬底温度、钨丝温度等参量对氢化非晶硅膜结构、光电特性及稳定性的影响。结果表明，沉积气压是影响非晶硅膜的最主要参数，在优化沉积参数的条件下制备非晶硅。

The effects of deposition pressure P g,substrate temperature T s,filament temperature T f on the properties and structure of a Si∶H film prepared by the hot wire chemical vapor deposition (HWCVD) technique have been systematically studied.The results show that the deposition pressure is the most significant parameter.The stability was signficantly improved by using optimized parameters.