SiON/SiN 太阳电池双层减反膜的性能研究

THE INVESTIGATION OF SiON/SiN DOUBLE-LAYER ANTIREFLECTION COATINGS FOR Si SOLAR CELLS

报道了用电子回旋共振化学气相淀积（ＥＣＲＣＶＤ）技术淀积ＳｉＯＮ／ＳｉＮ双层硅太阳电池减反膜的实验研究。用红外吸收谱、俄歇电子谱以及二次离子质谱等实验方法对薄膜的组分、结构、界面过渡区的特性以及膜层中的氢分布进行了分析，实验表明：在制备减反射膜时，要获得较佳的减反效果，应尽量降低淀积温度，增大微波功率。采用ＥＣＲＣＶＤ方法制备的ＳｉＯＮ／ＳｉＮ双层减反膜的平均反射率低于６％（波长范围３００—９００ｎｍ），电池转换效率约提高４５％。

Silicon oxynitride and silicon nitride double layer antireflection(AR) coatings for Si solar cells are prepared by the electron cyclotron resonance chemical vapor deposition(ECRCVD)method.The composition and interface state of double layer film are analyzed by IR,AES,SIMS,etc techniques.From these analyses,it is proved that higher microwave power and lower substrate temperature will facilitate the formation of the distinct transition region and the average reflection of SiON/SiN films in the range of 0.3～0.9μm is below 6%,the practical conversion efficiency(E ff )is improved by 45%.