摘要
设计了一款1.9-4.3 GHz的单片集成宽带VCO。采用三个低相位噪声LC VCO在频率上互相重叠的架构实现高频宽带特性,VCO内部集成中间抽头的差分电感。电路制造采用0.35μm SiGe BiCMOS工艺技术,VCO的工作频率达1.9-4.3 GHz,单元功耗仅为4 mA。在工作频率为2.46 GHz处,经过÷2分频器输出的相位噪声实测值为-97 dBc/Hz（100 kHz频偏下）。
An LC VCO with a wide tuning range （1.9 GHz to 4. 3GHz） was presented. The circuit was implemented by three low phase noise LC VCO overlapped each other at frequency. Centre-tapped differential induetors were integrated into each VCO. Fabricated in 0. 35 μm SiGe BiCMOS process, the VCO can operate at 1.9 - 4. 3 GHz with only 4 mA of power. The measured --2 phase noise at 2. 46 GHz was --97 dBc/Hz at 100 kHz offset from the carrier.
出处
《微电子学》
CAS
CSCD
北大核心
2007年第6期794-797,共4页
Microelectronics
关键词
宽带
锁相环
LC谐振腔
VCO
相位噪声
Wideband
Phase locked loop
LC resonant chamber
VCO
Phase noise
