在刻度Si(Au)面垒半导体探测器中发现的一个问题及其解决方法

A problem finding in calibration of Si(Au) surface-barrier semiconductor detector and a simple resolved method

在刻度Si(Au)面垒半导体探测器过程中观察到241Am标准放射源的的峰道址随入射窗的位置及大小的移动现象。猜测原因可能是Au层镀的不均匀导致电子-空穴对的复合几率增加,但具体原因仍需要进一步分析。由于这对重离子-原子碰撞实验中测量背散射谱极为不利,我们给出解决该问题的方法是固定入射窗的位置及大小,并刻度两套背散射谱仪,其对称放置在靶室内同时测量背散射离子,通过比较便可得到可信的实验结果。

In calibration of Si（Au） surface-barrier semiconductor detector,we find the peak-channel of 241Am standard radioactive source shift with the position and the size of incident window.The reason may be result from the non-uniformity of Au-layer plated on Si-layer,because it may increase the probability of electron-vacancy pair recombination,but the exact reason is not clear.Due to this problem is disadvantage to heavy ion-atom impact experiment;we resolve it by fixing up the position and the size of incident window and calibrating two sets of spectrometers,which placed symmetrically in the target room.Thus,this two set of apparatus can measure the back-scattered ions simultaneously in ion-atom impact experiment.We could obtain reliable experimental results by comparing with the two back-scattering spectra.