退火温度对硅基硬质碳膜内应力和硬度的影响

Influence of Annealing Temperature on Stress and Hardeness of Hard Carbon Film on Si Substrate

硬质碳膜中应力的存在限制了其应用,真空退火是降低内应力的有效措施.本文利用BGS6341型电子薄膜应力分布测试仪和HXD-1000型数字式硬度计,对在硅基片上用非平衡磁控溅射制备的碳膜应力和硬度随退火温度的变化进行了研究.研究结果表明:随退火温度的升高,碳膜平均应力减小,分布趋向均匀,但硬度下降;在退火温度300℃下平均应力减小为-2.29×108Pa,膜的硬度变化不明显,维氏硬度从4780.3589 MPa降到4194.099 MPa(类似于类金刚石(DLC)),此退火温度下保证了薄膜具有很小的内应力同时具有较高的硬度.

Applications of hard carbon films are restricted by its high stress. Carbon films grown on silicon wafers by unbalanced magnetron sputtering and annealed at different temperatures, were studied with BGS6341 optical phase shift technique and HXD-1000 indendor to understand the variations in hardness and stress of the film. The results showed that the rise of annealing temperature, from100℃ to 400℃, reduced significantly the stress but hardness of the carbon film. At 300 ℃, average stress reduced from 17. 514×10^8 Pa to --2.29×10^8 Pa with hardness from 4 780. 358 9 MPa to 4 194. 099 MPa similar with DLC. At 300 ℃, the film has lower stress and higher hardness.