单晶铜线材的表面氧化研究

Study on the Surface Oxidation of Single Crystal Copper Wire

为了解决单晶铜线材在存储过程中的氧化问题,本文通过氧化增重实验,对不同组织、不同纯度铜线材的表面氧化行为进行了研究.结果表明:温度的高低对铜线材的氧化速率起决定性作用,不同铜线材对温度的敏感程度不同.单晶铜的氧化速率低于多晶铜,纯度越高的单晶铜抗氧化性能越好.单晶铜的氧化速率与其晶粒取向有关,生长方向为<100>的单晶铜更容易氧化.铜线材的氧化速率是由Cu2O的生长速度控制的,主要因素是铜离子向外扩散的速率.低纯单晶铜和多晶铜的氧化膜均容易脱落,不能对基体起到应有的保护作用.

In order to solve the problem that copper wire is oxidized easily, using the oxidation liveweight gain experiment, the surface oxidation of different structure and purity copper wires have been studied. The results show that the temperature plays the most important role to oxidation rate of copper wires, but different copper wires have different sensitivity to temperature. The oxidation rate of single crystal copper wire is lower than that of poly-crystal copper wire. The higher purity, the stronger an- tioxidation. The oxidation rate of single crystal copper wire is related to the grain orientation, the single crystal copper wire with grain orientation of [100] is easy to be oxidized. The oxidation rate of copper wire is controlled by the growth rate of Cu2O. The oxide films of low purity single crystal copper and poly-crystal copper are easy to cast off from base metal.