Ga_2O_3薄膜气体传感器工作机理的研究

Study on Operating Mechanisms of Ga2O3Thin Film Gas Sensors

根据缺陷化学理论和半导体表面化学吸附理论，对体电导和表面电导分别提出了两个简化模型──单电离氧空位模型和一维积累层模型，解释了Ｇａ２Ｏ３薄膜在两个不同温区的不同的气体敏感特性。理论与实验结果的一致，表明了这两个简化模型的正确性和有效性。

Based on the theory of defect chemistry and chemisorption on semiconductor sur- faces, two simplified models are proposed: the singly - ionized oxygen vacancy model for bulk conductance and the l - D accumulation layer model for surface conductance, and are used to explain the distinct sensitive behaviors of Ga2O3 thin films to oxygen and reducing gases in higher and lower temperature regions, respectively. The agreement between the theory and the experiment has shown the correctness and validity of the two simplified models .