多量子阱结构的MOVPE生长

High quality Multi Quantum Well Structure by MOVPE

利用金属有机气相沉积技术生长ＩｎＧａＡｓＰ／ＩｎＰ多量子阱结构，通过改变生长程序，得到了优化的陡峭量子阱界面．并利用光致发光（ＰＬ）和Ｘ射线双晶衍射对其界面质量分析，Ｘ射线双晶衍射表明界面起伏为一个原子层厚度。

Multi quantum well interface quality is one of key factors that affect device performance. Metalorganic vapor phase epitaxial (MOVPE) grown InGaAsP/InP multi quantum well structure are studied. Abruptness optimization of interfaces is carried out by means of a different gas switching sequences. Analysis of x-ray and photoluminescence (PL) are used to provide detailed information about the interfaces. Measured and simulated rocking curves of Xray diffraction show monolayer fluctuations at the interfaces. Full width at half maximum(FWHM) of photoluminescence (PL) peaks is as low as 7.0 meV at 10 K temperature.