PET上沉积Al掺杂ZnO薄膜的光电特性研究

Optical and Electrical Properties of Al Doped ZnO Thin Films Prepared on Flexible PET at Room Temperature

采用脉冲激光沉积技术(PLD),室温下在柔性衬底PET上制备了高度c轴择优取向的Al掺杂ZnO薄膜。XRD分析表明,不同Al掺杂浓度的样品均呈现单一的ZnO相。荧光光谱和透射光谱分析显示,低温低氧压下制备的Al掺杂ZnO薄膜在紫光区域有很强的荧光发射,在可见光区域具有较高的透射率;并且可以通过Al掺杂浓度调节薄膜紫色发光强度和薄膜带隙。薄膜的电阻率随着Al掺杂浓度的增加先降低后增加,在掺杂浓度为3%原子分数时达到最小值。

Highly preferred c-axis oriented Al doped ZnO thin films were prepared successfully on PET at room temperature by pulse laser deposition （PLD）. XRD results show that only ZnO phase is observed in the samples. It is found from the photoluminescence results that the films deposited at low temperature and low oxygen pressure exhibit strong violet luminescence. Meanwhile, the intensity of violet luminescence changes with variations of Al doping concentration. The resistivity of films decreases first and then increases with increasing of the Al doping concentration and reaches a minimum at 3at% of Al doping concentration.