用直流磁控溅射法研制非晶硅太阳电池ZnO/Al背反射电极

Study of ZnO/Al Back Reflector of Amorphous Silicon Solar Cells with DC-magnetron Sputtering

本文首先在低温（140℃）和低功率下采用Zn：Al合金靶直流反应磁控溅射法研制ZnO：Al透明导电膜。然后在单结（glass／SnO2／pin／）或双结（glass／SnO2／pin／pin／）非晶硅电池上沉积约70-100nm厚的ZnO透明导电膜，最后再用电阻蒸发法沉积Al电极。实验获得了较好的n^＋／ZnO界面，实现了ZnO／Al背电极的增反作用，使电池的短路电流增加1-3mA／cm^2，光电转化效率提高1—3％（绝对效率），小面积电池效率达到9．5％。

The ZnO：Al transparent thin films were prepared by DC-magnetron sputtering using Zn：Al alloy target at the low temperature of 140℃. After single junction （glass/SnO2/pin/） and tandem （glass/ SnO2/pin/pin/） amorphous silicon solar cells were prepared. They were covered with thickness of 70- 100nm ZnO thin films. The Al electrodes were evaporated finally. The high performance interface of n ＋/ ZnO was achieved. The enhanced reflectance of ZnO/Al rear electrode was realized, which made the short currency of the cells increased by 1-3mA/cm2, the efficiency of the cells increased by 1-3%. As a result the high efficiency of 9.5% was achieved for single junction and tandem solar cells.