摘要
本文首先在低温(140℃)和低功率下采用Zn:Al合金靶直流反应磁控溅射法研制ZnO:Al透明导电膜。然后在单结(glass/SnO2/pin/)或双结(glass/SnO2/pin/pin/)非晶硅电池上沉积约70-100nm厚的ZnO透明导电膜,最后再用电阻蒸发法沉积Al电极。实验获得了较好的n^+/ZnO界面,实现了ZnO/Al背电极的增反作用,使电池的短路电流增加1-3mA/cm^2,光电转化效率提高1—3%(绝对效率),小面积电池效率达到9.5%。
The ZnO:Al transparent thin films were prepared by DC-magnetron sputtering using Zn:Al alloy target at the low temperature of 140℃. After single junction (glass/SnO2/pin/) and tandem (glass/ SnO2/pin/pin/) amorphous silicon solar cells were prepared. They were covered with thickness of 70- 100nm ZnO thin films. The Al electrodes were evaporated finally. The high performance interface of n +/ ZnO was achieved. The enhanced reflectance of ZnO/Al rear electrode was realized, which made the short currency of the cells increased by 1-3mA/cm2, the efficiency of the cells increased by 1-3%. As a result the high efficiency of 9.5% was achieved for single junction and tandem solar cells.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第6期1283-1287,共5页
Journal of Synthetic Crystals
基金
天津市科技发展计划项目(06YFGZGX02100)
国家重点基础研究发展规划"973"项目(No.2006CB202602
2006CB202603)
关键词
非晶硅电池
ZnO/Al复合背电极
背反射
短路电流
转换效率
amorphous silicon solar cells
ZnO/Al rear electrode
back reflectance
short currency
conversion efficiency