真空蒸发法制备ZnSe薄膜的X射线光电子能谱研究

Study on XPS of Zinc Selenide Thin Films by Vacuum Evaporation

本文用真空蒸发法制备了CIS太阳能电池中做缓冲材料的ZnSe薄膜,利用X射线光电子能谱(XPS)对制备薄膜的表面化学状态及沉积质量进行了研究,并用氩离子溅射进行剥蚀,逐层分析薄膜的化合态随深度的变化关系。XPS分析表明,ZnSe薄膜含有Zn、Se、O、C等元素,其中O、C为样品置于空气中所致,含量随剥蚀深度的加大而逐渐降低。Zn的光电子峰为Zn2p1/2和Zn2p3/2,Zn2p3/2的电子结合能为1021.90eV,对应着Zn2+的化合态,表明薄膜中Zn以形式电荷为Zn2+的化合态形式存在;Se的光电子峰为Se3d,其电子结合能为54.30eV,对应着Se2-的化合态,表明薄膜中Se以形式电荷Se2-的化合态形式存在。分别经过1min、3min、7min、11min的剥蚀后,Zn和Se的光电子峰几乎没有改变,表明沉积的ZnSe薄膜表面和内部化学状态稳定一致。

The investigations of ZnSe thin film as a buffer and window material in CIS solar cell deposited by vacuum evaporation was discribed in this paper. ZnSe thin film was deposited on the substrates of single crystal silicon by vacuum evaporation. The as-deposited film interface and its chemical state were studied by X-ray photo-elctron spectroscopy. The result shows that the chemical states of interface were very stable. The oxidation state of film does not change with the depth of Ar^＋-sputter denudation. XPS provide a new way to investigate the quality of thin film and its oxidation state.