p/i界面掺碳缓冲层沉积时间对非晶硅太阳电池性能的影响

Effects of Amorphous Silicon-carbide Buffer Layer at p/i Interface on the Performances of a-Si:H Solar Cells

本文研究了pin型非晶硅(a-Si)太阳电池p/i界面掺碳缓冲层(C-buffer layer)沉积时间对电池效率和稳定性的影响。研究发现,随着掺碳缓冲层沉积时间的增加,太阳电池的初始效率有所增加,当沉积时间增加到约60s时,电池的初始效率达最大值,而后随着沉积时间的继续增加,电池效率下降。而在太阳电池的稳定性方面,当缓冲层沉积时间小于50s时,随着沉积时间的增加,电池衰退率增大;大于50s后,电池的衰退率又随沉积时间的增大而减小。

The effects of deposition time of amorphous silicon-carbide buffer layer at p/i interface on the performance of a-Si：H solar cells have been studied in this paper. The results indicated that the initial efficiency of solar cells were improved with the increasing of buffer layer deposit!on time and the maximum exists at the point of about 60s, and then become worse with increasing the deposition time. As to the stabitity, the light-induced degradation rate of a-Si solar cells increased with the increase of buffer layer deposition time when it is less than 50s, while the degradation decreased with the increase of deposition time when it is more than 50s.