An organic light-emitting devices of highly efficient white phosphor using an electron/exciton blocker

Highly efficient white phosphorescent organic light-emitting devices (WOLEDs) was fabricated using an electron/exciton blocker. The device structure is ITO/2T-NATA(25 nm)/ NPBX(25-dnm)/CBP:5%Ir(ppy)3:0.5%Rubrene(8 nm)/NPBX(dnm)/ DPVBi(30 nm)/TPBi(20 nm)/Alq(10nm)/LiF(1nm)/Al, in which N,N '-bis- (1-naphthyl)- N,N '-diphenyl -1, 1 '- bi- phenyl-4,4 '-diamine (NPBX) functions as a hole transport layer and electron/exciton blocker, 4,4,N,N '- dicarbazolebiphenyl (CBP) is host, 4,4'-bis(2,2 -diphenyl vinyl)-1,1 '-biphenyl (DPVBi) is blue fluorescent dye, 5,6,11, 12,-tetraphenylnaphthacene (rubrene) is fluorescent dye, factris (2-phenylpyridine) iridium (Ir(ppy)3) is phosphorescent sensitizer and tris(8-hydroxyquinoline) aluminum (Alq3) is an electron transport layer. The WOLEDs have obtained white light emission by adjusting the thickness of NPBX , when the concentration of Ir(ppy)3 is 5-wt% and rubrene is 0.5-wt%, respectively, the thickness of the doped emissive layer is 8 nm, the WOLEDs show a maximum luminous efficiency is 11.2 cd/ A with d of 10 nm at 7 V and a maximum luminance of 28170 cd/m2 at 17 V, the CIE coordinates is (0.37.0.42), which is in white region.

Highly efficient white phosphorescent organic light-emitting devices （WOLEDs） was fabricated using an electron/exciton blocker. The device structure is ITO/2T-NATA（25 nm）/NPBX（25-dnm）/CBP：5%Ir（ppy）3：0.5%Rubrene（8 nm）/NPBX（dnm）/ DPVBi（30 nm）/TPBi（20 nm）/Alq（10nm）/LiF（1nm）/A1, in which N,N ＇ -bis- （1-naphthyl）- N,N ＇ -dipheny1-1, 1 ＇ - biphenyl-4,4 i -diamine （NPBX） functions as a hole transport layer and electron/exciton blocker, 4,4,N,N ＇ dicarbazolebiphenyl （CBP） is host, 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1 ＇ -biphenyl （DPVBi） is blue fluorescent dye, 5,6,11, 12,-tetraphenylnaphthacene （rubrene） is fluorescent dye, factris （2-phenylpyridine） iridium （Ir（ppy）3） is phosphorescent sensitizer and tris（8-hydroxyquinoline） aluminum （Alq3） is an electron transport layer. The WOLEDs have obtained white light emission by adjusting the thickness of NPBX, when the concentration of Ir（ppy）3 is 5-wt% and rubrene is 0.5-wt%, respectively, the thickness of the doped emissive layer is 8 nm, the WOLEDs show a maximum luminous efficiency is 11.2 cd/ A with d of 10 nm at 7 V and a maximum luminance of 28170 cd/m^2 at 17 V, the CIE coordinates is （0.37.0.42）, which is in white region.