摘要
利用TCAD软件对单层多晶EEPROM器件特性进行了模拟分析,介绍了单层多晶EEPROM存储单元结构与原理的基础,针对TCAD软件中模拟分析单层多晶EEPROM器件特性时存在的困难,提出了一种两个MOS管外加电阻的等效模型来替代单层多晶EEPROM存储单元结构进行等效模拟。通过编程模拟了单层多晶EEPROM器件性能,模拟分析得到的特性曲线与理论曲线能较好吻合,验证了等效模型方案的可行性。
Simulation analysis of the device performance of single poly EEPROM was made based on TCAD. The structure and principle of single poly EEPROM memory were introduced. To overcome the difficulties in simulating the performance of single poly EEPROM device in TCAD, a equivalent simulation model with double MOS components and resistance was EEPROM structure, characteristic curves feasible , and used to replace the single poly device performance was simulated through programming. Numerical results show that the of the device agree well with theoretical results, the proposed equivalent model is proved
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第1期15-18,共4页
Semiconductor Technology
基金
安徽省自然科学基金资助项目(05040202)
安徽省教育厅自然科学重点科研计划项目资助(2006KJ026A)