摘要
Fabricated are the double-barrier light emission tunnel junctions successfully. Introduced are the fabrication process and light emission characteristics. The spectra of the junctions are measured and analyzed especially. Their spectrum wavelength including main wave peak(locates at 450 nm^500 nm) of the double-barrier junction shows a "blue shift" in comparison with that of the single-barrier Metal/Insulator/Semiconductor(MIS) or Metal/Insulator/Metal(MIM) junction(wave peak locates at 620 nm^740 nm). This phenomenon should be due to the occurrence of the electron resonant tunneling in the double-barrier junction.
Fabricated are the double-barrier light emission tunnel junctions successfully. Introduced are the fabrication process and light emission characteristics. The spectra of the junctions are measured and analyzed especially. Their spectrum wavelength including main wave peak（locates at 450 nm～500 nm） of the double- barrier junction shows a ＂blue shift＂ in comparison with that of the single-barrier Metal/Insulator/ Semiconductor（MIS） or Metal/Insulator/Metal（MIM） junction（wave peak locates at 620 nm-740 nm）. This phenomenon should be due to the occurrence of the electron resonant tunneling in the double-barrier junction.
基金
National Natural Science Foundation of China(69576006)
关键词
隧道功能
薄膜性质
光发射
光谱
tunnel junction
double-barrier
light emission spectrum
electron resonant tunneling
