保护电力半导体器件的大容量熔断器参数分析

Fuese with High Breaking Capacity for the Protection of Power Semiconductor Devices

介绍了我国保护电力半导体器件大容量熔断器的发展方向和要求；讨论和分析了保护电力半导体器件大容量熔断器的额定电压、额定电流、Ｉ２ｔ、开断电流的安秒特性、截流电流峰值、电弧电压、频率、温升等主要参数。

Introduces the development of fuses with high breaking capacity for the protec- tion of power semiconductor devices in China in future. Discusses and analyses the sepecific terms, such as rated voltage, rated current, I2t, breaking current with its ampere - time characteristics, peak value of cut - out current, arc voltage, frequency and tamperature rise etc.