Cr,Mo对Cu/Si(100)薄膜体系结构、电阻率及扩散性能的影响

The Effects of Cr,Mo on Microstructure,Electrical Resistivity and Diffusion Property of Cu Films on Si(100)

利用简易合金靶材在Si（100）基底单靶磁控溅射制备Cu（Cr）、Gu（Mo）薄膜．研究薄膜在300～500℃退火前后的结构、电学及扩散性能的变化．结果表明，Cr、MO的加入增强了Cu薄膜的（111）织构，且溅射态薄膜电阻率显著增加．真空退火后，Cu（200）和Cu（220）衍射峰增强，但薄膜保持较强的（111）织构．Cu（1．19％Cr）薄膜电阻率随温度升高先减小后增加，400℃退火后电阻率最小，为2．76μΩ·cm，接近纯Cu薄膜（2．55μΩ·cm）；而Cu（1．28％Mo）薄膜的电阻率一直呈下降趋势．Cu（1．28%Mo）薄膜在400℃退火30min后，薄膜与Si基底间的互扩散深度约60nm，与纯Cu薄膜（约70nm）相似．而Cu（1．19%Cr）薄膜的互扩散深度较小为30nm．Cr显著减小了Cu、Si之间的互扩散．这与Cr在薄膜／基体界面处的偏聚有关．

Cu（Cr） and Cu（Mo） films were deposited on the Si （100） substrate by magnetron sputtering. The effects of Cr, Mo on the microstructure of films, electrical resistivity and diffusion characteristics of copper films were investigated. The results show that Cr, Mo intensify the （111） texture and increase the electrical resistivity of as-deposited Cu films greatly. As the annealing temperature increases, strong （111） texture is maintained in the Cu（1.19%Cr） and Cu（1.28%Mo） film, and Cu（200） and Cu（220）peaks increase with the increasing temperatures. The electrical resistivity of Cu（1. 19%Cr） film decreases firstly and increases subsequently, with a minimum about 2.76μΩ·cm at 400 ℃, while that of Cu（1.28%Mo） films decreases till 500 ℃. The depth of inter-diffusion of Cu and Si is about 60 nm for Cu（1.28%Mo） films annealed at 400 ℃ for 30min, which is similar with the Cu film （-70 nm）, while the depth for Cu （1.19%Cr） film is 30 nm. Cr decreases the inter-diffusion of Cu and Si markedly, which can be attributed to the segregation of Cr at the interface between the film and substrate.